GaN Technology

GaN HEMTs offer lower switching loss and smaller device capacitance than comparable silicon MOSFETs, enabling higher frequency or higher power density in the transmitter stage. For floor-mounted charging docks with tight thermal envelopes, that can mean smaller magnetics and heatsinks.

GaN demands disciplined layout — short loops, careful gate drive, and controlled dv/dt. An excellent GaN part on a poor PCB performs worse than a mature Si MOSFET on a good one.

01Advantages for WPT

• Reduced switching loss when pushing frequency for compact coils.
• Lower Qoss aiding ZVS transitions in some topologies.
• Smaller power stage footprint for slim dock profiles.

02Design cautions

Gate threshold and drive requirements differ from Si — use recommended drivers and layout guidelines from the device vendor. Miller plateau and ringing are unforgiving at high dv/dt. EMI filters and shielding may need reinforcement when migrating from Si to GaN at the same frequency.

03When to adopt

• Power density or frequency target cannot be met with Si within thermal budget.
• Team has layout and measurement capability for GHz-speed loop design.
• Total cost of ownership includes magnetics savings, not device price alone.